- Materials production and research
- Materials for microelectronics and photonics
Our specialists create single crystals of indium and gallium antimonide with diameters ranging from 40 to 100 mm, as well as wafers with diameters up to 45 mm for optoelectronic devices, laser technology, and ionizing radiation detectors.
These products are useful for high-speed transistors, as well as LEDs and photodetectors operating in various spectral ranges.
The materials are grown using the low-gradient Czochralski method, which involves growth at low temperature gradients (less than one degree).
Key features include:
- Production of single crystals with unique technical characteristics not found elsewhere in Russia
- High productivity in growing crystals, wafers, and substrates of various sizes
