Semiconductor materials for ionizing radiation detectors and spectrometers

  • Materials production and research
  • Materials for microelectronics and photonics

We produce crystals with diameters ranging from 21 to 75 mm and substrates with diameters up to 51 mm using Cadmium Zinc Telluride (CdZnTe) compound. The crystals are grown using the Bridgman-Stockbarger method, which allows for the production of crystals with a more perfect structure.

Substrates are manufactured using three modern technologies: liquid phase, vapor phase (from metal- organic compound vapors using MOCVD), and molecular beam epitaxy. These methods enable precise control over the growth of one crystalline material on another. The semiconductor materials we produce are used in optoelectronics and photonics.

  • High quality with excellent structural perfection of heterostructures achieved through the matching of lattice periods between the substrate and the epitaxial layers of CdHgTe with various chemical compositions and desired doping levels)