- Materials production and research
- Materials for power semiconductor devices and integrated circuits
Our specialists can develop an industrial production technology for gallium arsenide structures using liquid phase epitaxy, suitable for manufacturing semiconductor devices based on them. We can assist in designing the necessary technological equipment and organizing the production of epitaxial wafers with a diameter of 76 mm.
These wafers are intended for creating a new class of power semiconductor devices with an extended operating temperature range from -60 to 250°C, improved speed, and a working voltage of up to 1200 V.
- Creation of semiconductor devices based on gallium arsenide epitaxial structures with improved characteristics (expanded temperature range, radiation resistance, increased operating voltage, and speed)
